IRFZ44N hexfet ? power mosfet parameter typ. max. units r q jc junction-to-case CCC 1.5 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 55v r ds(on) = 17.5m w i d = 49a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 49 i d @ t c = 100c continuous drain current, v gs @ 10v 35 a i dm pulsed drain current ? 160 p d @t c = 25c power dissipation 94 w linear derating factor 0.63 w/c v gs gate-to-source voltage 20 v i ar avalanche current ? 25 a e ar repetitive avalanche energy ? 9.4 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) www.freescale.net.cn 1 / 8
s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 25a, v gs = 0v ? t rr reverse recovery time CCC 63 95 ns t j = 25c, i f = 25a q rr reverse recovery charge CCC 170 260 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 49 160 a ? starting t j = 25c, l = 0.48mh r g = 25 w , i as = 25a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: ? i sd 25a, di/dt 230a/s, v dd v (br)dss , t j 175c ? pulse width 400s; duty cycle 2%. ? this is a typical value at device destruction and represents operation outside rated limits. ? this is a calculated value limited to t j = 175c . parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.058 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 17.5 m w v gs = 10v, i d = 25a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 19 CCC CCC s v ds = 25v, i d = 25a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 63 i d = 25a q gs gate-to-source charge CCC CCC 14 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 23 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 12 CCC v dd = 28v t r rise time CCC 60 CCC i d = 25a t d(off) turn-off delay time CCC 44 CCC r g = 12 w t f fall time CCC 45 CCC v gs = 10v, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 1470 CCC v gs = 0v c oss output capacitance CCC 360 CCC v ds = 25v c rss reverse transfer capacitance CCC 88 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ? CCC 530 ? 150 ? mj i as = 25a, l = 0.47mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current IRFZ44N www.freescale.net.cn 2 / 8
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4 5 6 7 8 9 10 11 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 49a IRFZ44N www.freescale.net.cn 3 / 8
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 10 20 30 40 50 60 70 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 25a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 1000 0.0 0.6 1.2 1.8 2.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec IRFZ44N www.freescale.net.cn 4 / 8
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) IRFZ44N www.freescale.net.cn 5 / 8
q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 60 120 180 240 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10a 18a 25a IRFZ44N www.freescale.net.cn 6 / 8
peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets IRFZ44N www.freescale.net.cn 7 / 8
lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part marking information to-220ab package outline to-220ab dimensions are shown in millimeters (inches) part number international rectifier example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a IRFZ44N www.freescale.net.cn 8 / 8
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